MJE2801T Bipolar Transistor
Characteristics of MJE2801T Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 4 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 75 W
- DC Current Gain (hfe): 25 to 100
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
- Electrically Similar to the Popular MJE2801 transistor
Pinout of MJE2801T
Complementary PNP transistor
Replacement and Equivalent for MJE2801T transistor
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