BD709 Bipolar Transistor

Characteristics of BD709 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 75 W
  • DC Current Gain (hfe): 15 to 150
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD709

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD709 is the BD710.

Replacement and Equivalent for BD709 transistor

You can replace the BD709 with the BD711, BD909 or BD911.
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