BD190 Bipolar Transistor

Characteristics of BD190 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -70 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD190

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD190 is the BD189.

SMD Version of BD190 transistor

The NZT660 (SOT-223) is the SMD version of the BD190 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD190 transistor

You can replace the BD190 with the 2N6035, 2N6035G, 2N6036, 2N6036G, 2SB1168, 2SB1168-Q, 2SB1168-R, 2SB1168-S, 2SB1168-T, BD440, BD440G, BD442, BD442G, BD678, BD678A, BD678AG, BD678G, BD680, BD680A, BD680AG, BD680G, BD682, BD682G, BD778, BD780, BD788, BD788G, BD790, BD792, KSE700, KSE701, KSE702, KSE703, MJE233, MJE234, MJE250, MJE251, MJE253, MJE253G, MJE700, MJE700G, MJE701, MJE701G, MJE702, MJE702G, MJE703 or MJE703G.
If you find an error please send an email to mail@el-component.com