MJE702G Bipolar Transistor
Characteristics of MJE702G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -4 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
Pinout of MJE702G
Equivalent circuit
Complementary NPN transistor
Replacement and Equivalent for MJE702G transistor
If you find an error please send an email to mail@el-component.com