MJE702G Bipolar Transistor

Characteristics of MJE702G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of MJE702G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJE702G equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the MJE702G is the MJE802G.

Replacement and Equivalent for MJE702G transistor

You can replace the MJE702G with the 2N6036, 2N6036G, BD680, BD680A, BD680AG, BD680G, BD682, BD682G, BD780, KSE702, KSE703, MJE702, MJE703 or MJE703G.
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