BD680G Bipolar Transistor

Characteristics of BD680G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The BD680G is the lead-free version of the BD680 transistor

Pinout of BD680G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD680G is the BD679G.

Replacement and Equivalent for BD680G transistor

You can replace the BD680G with the 2N6036, 2N6036G, BD680, BD680A, BD680AG, BD682, BD682G, BD780, KSE702, KSE703, MJE702, MJE702G, MJE703 or MJE703G.
If you find an error please send an email to mail@el-component.com