2N6036G Bipolar Transistor

Characteristics of 2N6036G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750 to 15000
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The 2N6036G is the lead-free version of the 2N6036 transistor

Pinout of 2N6036G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N6036G is the 2N6039G.

Replacement and Equivalent for 2N6036G transistor

You can replace the 2N6036G with the 2N6036, BD680, BD680A, BD680AG, BD680G, BD682, BD682G, BD780, KSE702, KSE703, MJE252, MJE254, MJE702, MJE702G, MJE703 or MJE703G.
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