BD788G Bipolar Transistor
Characteristics of BD788G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -4 A
- Collector Dissipation: 15 W
- DC Current Gain (hfe): 40 to 250
- Transition Frequency, min: 50 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
Pinout of BD788G
Replacement and Equivalent for BD788G transistor
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