BD442G Bipolar Transistor
Characteristics of BD442G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -4 A
- Collector Dissipation: 36 W
- DC Current Gain (hfe): 40 to 140
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
Pinout of BD442G
SMD Version of BD442G transistor
Replacement and Equivalent for BD442G transistor
Equivalent
- TO-220 package, BD535J: 50 watts
If you find an error please send an email to mail@el-component.com