BD682G Bipolar Transistor

Characteristics of BD682G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The BD682G is the lead-free version of the BD682 transistor

Pinout of BD682G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD682G is the BD681G.

Replacement and Equivalent for BD682G transistor

You can replace the BD682G with the BD682.
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