MJE703G Bipolar Transistor

Characteristics of MJE703G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of MJE703G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJE703G equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the MJE703G is the MJE803G.

Replacement and Equivalent for MJE703G transistor

You can replace the MJE703G with the 2N6036, 2N6036G, BD680, BD680A, BD680AG, BD680G, BD682, BD682G, BD780, KSE702, KSE703, MJE702, MJE702G or MJE703.
If you find an error please send an email to mail@el-component.com