2N6035 Bipolar Transistor
Characteristics of 2N6035 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -4 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 750 to 15000
- Transition Frequency, min: 25 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
Pinout of 2N6035
Complementary NPN transistor
Replacement and Equivalent for 2N6035 transistor
Lead-free Version
If you find an error please send an email to mail@el-component.com