MJE253 Bipolar Transistor

Characteristics of MJE253 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 40 to 180
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE253

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE253 is the MJE243.

SMD Version of MJE253 transistor

The BDP954 (SOT-223) is the SMD version of the MJE253 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for MJE253 transistor

You can replace the MJE253 with the BD792, MJE253G or MJE254.

Lead-free Version

The MJE253G transistor is the lead-free version of the MJE253.
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