MJE253G Bipolar Transistor
Characteristics of MJE253G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -4 A
- Collector Dissipation: 15 W
- DC Current Gain (hfe): 40 to 180
- Transition Frequency, min: 2 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
- The MJE253G is the lead-free version of the MJE253 transistor
Pinout of MJE253G
Complementary NPN transistor
SMD Version of MJE253G transistor
Replacement and Equivalent for MJE253G transistor
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