MJE253G Bipolar Transistor

Characteristics of MJE253G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 40 to 180
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The MJE253G is the lead-free version of the MJE253 transistor

Pinout of MJE253G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE253G is the MJE243G.

SMD Version of MJE253G transistor

The BDP954 (SOT-223) is the SMD version of the MJE253G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for MJE253G transistor

You can replace the MJE253G with the BD792, MJE253 or MJE254.
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