2SB1168-R Bipolar Transistor

Characteristics of 2SB1168-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 130 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB1168-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1168-R transistor can have a current gain of 100 to 200. The gain of the 2SB1168 will be in the range from 70 to 400, for the 2SB1168-Q it will be in the range from 70 to 140, for the 2SB1168-S it will be in the range from 140 to 280, for the 2SB1168-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1168-R might only be marked "B1168-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1168-R is the 2SD1725-R.

SMD Version of 2SB1168-R transistor

The BDP954 (SOT-223) and BDP956 (SOT-223) is the SMD version of the 2SB1168-R transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1168-R transistor

You can replace the 2SB1168-R with the BD792 or MJE254.
If you find an error please send an email to mail@el-component.com