MJE251 Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -80 V
• Collector-Base Voltage, max: -80 V
• Emitter-Base Voltage, max: -7 V
• Collector Current − Continuous, max: -4 A
• Collector Dissipation: 15 W
• DC Current Gain (h_fe): 40 to 180
• Transition Frequency, min: 2 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-126

Here is an image showing the pin diagram of this transistor.The complementary NPN transistor to the MJE251 is the MJE241.The BDP952 (SOT-223) is the SMD version of the MJE251 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the MJE251 with the BD790, BD792, MJE250, MJE252, MJE253, MJE253G or MJE254.