MJE250 Bipolar Transistor

Characteristics of MJE250 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 40 to 200
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE250

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE250 is the MJE240.

SMD Version of MJE250 transistor

The BDP952 (SOT-223) is the SMD version of the MJE250 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for MJE250 transistor

You can replace the MJE250 with the BD790, BD792, MJE252 or MJE254.
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