BD682 Bipolar Transistor

Characteristics of BD682 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD682

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BD682 equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the BD682 is the BD681.

Replacement and Equivalent for BD682 transistor

You can replace the BD682 with the BD682G.

Lead-free Version

The BD682G transistor is the lead-free version of the BD682.
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