BD138-6 Bipolar Transistor

Characteristics of BD138-6 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 40 to 100
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of BD138-6

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD138-6 transistor can have a current gain of 40 to 100. The gain of the BD138 will be in the range from 40 to 250, for the BD138-10 it will be in the range from 63 to 160, for the BD138-16 it will be in the range from 100 to 250.

Complementary NPN transistor

The complementary NPN transistor to the BD138-6 is the BD137-6.

SMD Version of BD138-6 transistor

The BCP52 (SOT-223) and BSR30 (SOT-89) is the SMD version of the BD138-6 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD138-6 transistor

You can replace the BD138-6 with the 2N4919, 2N4919G, 2N4920, 2N4920G, 2N5194, 2N5194G, BD138G, BD140, BD140-6, BD140G, BD168, BD170, BD178, BD180, BD180G, BD190, BD229, BD231, BD236, BD236G, BD238, BD238G, BD378, BD378-6, BD380, BD380-6, BD440, BD440G, BD442, BD442G, BD788, BD788G, BD790, BD792, MJE233, MJE234, MJE235, MJE250, MJE251, MJE252, MJE253, MJE253G, MJE254, MJE711 or MJE712.
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