BD138 Bipolar Transistor

Characteristics of BD138 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 40 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of BD138

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD138 transistor can have a current gain of 40 to 250. The gain of the BD138-10 will be in the range from 63 to 160, for the BD138-16 it will be in the range from 100 to 250, for the BD138-6 it will be in the range from 40 to 100.

Complementary NPN transistor

The complementary NPN transistor to the BD138 is the BD137.

SMD Version of BD138 transistor

The BCP52 (SOT-223) is the SMD version of the BD138 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD138 transistor

You can replace the BD138 with the BD138G, BD140, BD140G, BD168, BD170, BD178, BD180, BD180G, BD190, BD229, BD231, BD236, BD236G, BD238, BD238G, BD378, BD380, BD788, BD788G, BD790, BD792, MJE235, MJE252, MJE254, MJE711 or MJE712.

Lead-free Version

The BD138G transistor is the lead-free version of the BD138.
If you find an error please send an email to mail@el-component.com