MJE252 Bipolar Transistor

Characteristics of MJE252 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 25
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE252

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE252 is the MJE242.

SMD Version of MJE252 transistor

The BDP952 (SOT-223) is the SMD version of the MJE252 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for MJE252 transistor

You can replace the MJE252 with the 2N4920, 2N4920G, 2N6036, 2N6036G, 2SB1168, 2SB1168-Q, 2SB1168-R, 2SB1168-S, 2SB1168-T, BD442, BD442G, BD680, BD680A, BD680AG, BD680G, BD682, BD682G, BD780, BD790, BD792, KSE702, KSE703, MJE250, MJE251, MJE253, MJE253G, MJE254, MJE702, MJE702G, MJE703 or MJE703G.
If you find an error please send an email to mail@el-component.com