BD180G Bipolar Transistor

Characteristics of BD180G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 40 to 250
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD180G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD180G is the BD179G.

SMD Version of BD180G transistor

The BDP952 (SOT-223) is the SMD version of the BD180G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD180G transistor

You can replace the BD180G with the BD180, BD790, BD792, MJE252 or MJE254.
If you find an error please send an email to mail@el-component.com