BD138-10 Bipolar Transistor

Characteristics of BD138-10 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 63 to 160
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of BD138-10

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD138-10 transistor can have a current gain of 63 to 160. The gain of the BD138 will be in the range from 40 to 250, for the BD138-16 it will be in the range from 100 to 250, for the BD138-6 it will be in the range from 40 to 100.

Complementary NPN transistor

The complementary NPN transistor to the BD138-10 is the BD137-10.

SMD Version of BD138-10 transistor

The 2SA1364 (SOT-89), BCP52 (SOT-223), BCP52-10 (SOT-223), BCX52 (SOT-89), BCX52-10 (SOT-89) and MMBT4354 (SOT-23) is the SMD version of the BD138-10 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD138-10 transistor

You can replace the BD138-10 with the 2SB649, 2SB744A, BD138G, BD140, BD140-10, BD140G, BD168, BD170, BD178, BD178-10, BD180, BD180-10, BD180G, BD190, BD229, BD231, BD236, BD236G, BD238, BD238G, BD378, BD378-10, BD380, BD380-10, BD788, BD788G, BD790, BD792, KSB744A, KSE171, KSE172, MJE171, MJE171G, MJE172, MJE172G, MJE233, MJE235, MJE250, MJE251, MJE252, MJE253, MJE253G, MJE254, MJE711 or MJE712.
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