MJE254 Bipolar Transistor

Characteristics of MJE254 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 25
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE254

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE254 is the MJE244.

SMD Version of MJE254 transistor

The BDP954 (SOT-223) is the SMD version of the MJE254 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for MJE254 transistor

You can replace the MJE254 with the 2SB1168, 2SB1168-Q, 2SB1168-R, 2SB1168-S, 2SB1168-T, BD682, BD682G, BD792, MJE253 or MJE253G.
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