BD137-6 Bipolar Transistor

Characteristics of BD137-6 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 40 to 100
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of BD137-6

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD137-6 transistor can have a current gain of 40 to 100. The gain of the BD137 will be in the range from 40 to 250, for the BD137-10 it will be in the range from 63 to 160, for the BD137-16 it will be in the range from 100 to 250.

Complementary PNP transistor

The complementary PNP transistor to the BD137-6 is the BD138-6.

SMD Version of BD137-6 transistor

The BCP55 (SOT-223) and BSR40 (SOT-89) is the SMD version of the BD137-6 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD137-6 transistor

You can replace the BD137-6 with the 2N4922, 2N4922G, 2N4923, 2N4923G, 2N5191, 2N5191G, BD137G, BD139, BD139-6, BD139G, BD167, BD169, BD177, BD179, BD189, BD228, BD230, BD235, BD235G, BD237, BD237G, BD377, BD377-6, BD379, BD379-6, BD439, BD439G, BD441, BD441G, BD787, BD787G, BD789, BD791, MJE223, MJE224, MJE225, MJE240, MJE241, MJE242, MJE243, MJE243G, MJE244, MJE721 or MJE722.
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