BD231 Bipolar Transistor

Characteristics of BD231 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 40 to 250
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD231

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD231 is the BD230.

SMD Version of BD231 transistor

The BCP53 (SOT-223) is the SMD version of the BD231 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD231 transistor

You can replace the BD231 with the BD140, BD140G, BD170, BD180, BD180G, BD238, BD238G, BD380, BD790, BD792, MJE252, MJE254 or MJE712.
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