MJE15035G Bipolar Transistor

Characteristics of MJE15035G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -350 V
  • Collector-Base Voltage, max: -350 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 100
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE15035G is the lead-free version of the MJE15035 transistor

Pinout of MJE15035G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJE15035G is the MJE15034G.

Replacement and Equivalent for MJE15035G transistor

You can replace the MJE15035G with the MJE15035.
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