MJE15035G Bipolar Transistor
Characteristics of MJE15035G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -350 V
- Collector-Base Voltage, max: -350 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -8 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 100
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
- The MJE15035G is the lead-free version of the MJE15035 transistor
Pinout of MJE15035G
Complementary NPN transistor
Replacement and Equivalent for MJE15035G transistor
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