2SA1009A-H Bipolar Transistor

Characteristics of 2SA1009A-H Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -400 V
  • Collector-Base Voltage, max: -400 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 100 to 200
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1009A-H

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1009A-H transistor can have a current gain of 100 to 200. The gain of the 2SA1009A will be in the range from 20 to 200, for the 2SA1009A-J it will be in the range from 60 to 120, for the 2SA1009A-K it will be in the range from 40 to 80, for the 2SA1009A-L it will be in the range from 30 to 60, for the 2SA1009A-M it will be in the range from 20 to 40.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1009A-H might only be marked "A1009A-H".

Replacement and Equivalent for 2SA1009A-H transistor

You can replace the 2SA1009A-H with the MJE5852 or MJE5852G.
If you find an error please send an email to mail@el-component.com