2SB630-Q Bipolar Transistor

Characteristics of 2SB630-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB630-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB630-Q transistor can have a current gain of 100 to 200. The gain of the 2SB630 will be in the range from 40 to 200, for the 2SB630-R it will be in the range from 60 to 120, for the 2SB630-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB630-Q might only be marked "B630-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB630-Q is the 2SD610-Q.

Replacement and Equivalent for 2SB630-Q transistor

You can replace the 2SB630-Q with the 2SA1009, 2SA1009-H, 2SA1009A, 2SA1009A-H, 2SA1668, MJE15033, MJE15033G, MJE15035, MJE15035G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.
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