BDW63A Bipolar Transistor
Characteristics of BDW63A Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 6 A
- Collector Dissipation: 60 W
- DC Current Gain (hfe): 750 to 20000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDW63A
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
The complementary
PNP transistor to the BDW63A is the
BDW64A.
Replacement and Equivalent for BDW63A transistor
You can replace the BDW63A with the
2SC1985,
2SC1986,
2SC2315,
2SC2316,
2SD823,
BD203,
BD243A,
BD243B,
BD243C,
BD303,
BD535,
BD537,
BD543A,
BD543B,
BD543C,
BD545A,
BD545B,
BD545C,
BD645,
BD647,
BD649,
BD651,
BD797,
BD799,
BD801,
BD807,
BD809,
BD897,
BD897A,
BD899,
BD899A,
BD901,
BDT81,
BDT81F,
BDT83,
BDT83F,
BDT85,
BDT85F,
BDT87,
BDT87F,
BDW23A,
BDW23B,
BDW23C,
BDW63B,
BDW63C,
BDW63D,
BDW73A,
BDW73B,
BDW73C,
BDW73D,
BDX33A,
BDX33B,
BDX33BG,
BDX33C,
BDX33CG,
BDX33D,
BDX53A,
BDX53B,
BDX53BG,
BDX53C,
BDX53CG,
BDX53D,
BDX77,
D44H11,
D44H11FP,
D44H8,
MJE15028,
MJE15028G,
TIP41D or
TIP42D.
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