BDW23B Bipolar Transistor
Characteristics of BDW23B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 6 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 750 to 20000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDW23B
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
The complementary
PNP transistor to the BDW23B is the
BDW24B.
Replacement and Equivalent for BDW23B transistor
You can replace the BDW23B with the
2SC1986,
2SC2316,
2SD823,
BD243B,
BD243C,
BD537,
BD543B,
BD543C,
BD545B,
BD545C,
BD647,
BD649,
BD651,
BD799,
BD801,
BD809,
BD899,
BD899A,
BD901,
BDT83,
BDT83F,
BDT85,
BDT85F,
BDT87,
BDT87F,
BDW23C,
BDW63B,
BDW63C,
BDW63D,
BDW73B,
BDW73C,
BDW73D,
BDX33B,
BDX33BG,
BDX33C,
BDX33CG,
BDX33D,
BDX53B,
BDX53BG,
BDX53C,
BDX53CG,
BDX53D,
BDX53E,
BDX53F,
BDX77,
D44H11,
D44H11FP,
MJE15028,
MJE15028G,
MJE15030,
MJE15030G,
MJF15030,
MJF15030G,
TIP41D,
TIP41E,
TIP41F,
TIP42D,
TIP42E or
TIP42F.
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