BD538K Bipolar Transistor

Characteristics of BD538K Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 40 to 100
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD538K

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD538K transistor can have a current gain of 40 to 100. The gain of the BD538 will be in the range from 40 to 0, for the BD538J it will be in the range from 30 to 75.

Complementary NPN transistor

The complementary NPN transistor to the BD538K is the BD537K.

Replacement and Equivalent for BD538K transistor

You can replace the BD538K with the 2N6491, 2N6491G, BD710, BD712, BD744B, BD744C, BD800, BD802, BD810, BD910, BD912, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDT94, BDT94F, BDT96, BDT96F, BDX78, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031, MJF15031G, MJF2955 or MJF2955G.
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