BDT82 Bipolar Transistor
Characteristics of BDT82 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 125 W
- DC Current Gain (hfe): 40
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDT82
Complementary NPN transistor
Replacement and Equivalent for BDT82 transistor
If you find an error please send an email to mail@el-component.com