BDT82 Bipolar Transistor

Characteristics of BDT82 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT82

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT82 is the BDT81.

Replacement and Equivalent for BDT82 transistor

You can replace the BDT82 with the 2SA1744, 2SA1744-K, 2SA1744-L, 2SA1744-M, BD546A, BD546B, BD546C, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDW45, BDW46, BDW46G, BDW47, BDW47G, BDW48, MJF6668 or MJF6668G.
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