BDT82F Bipolar Transistor

Characteristics of BDT82F Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 36 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F

Pinout of BDT82F

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT82F is the BDT81F.

Replacement and Equivalent for BDT82F transistor

You can replace the BDT82F with the 2SA1744, 2SA1744-K, 2SA1744-L, 2SA1744-M, BD546A, BD546B, BD546C, BDT82, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDW45, BDW46, BDW46G, BDW47, BDW47G, BDW48, MJF6668 or MJF6668G.
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