BD536J Bipolar Transistor

Characteristics of BD536J Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 30 to 75
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD536J

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD536J transistor can have a current gain of 30 to 75. The gain of the BD536 will be in the range from 40 to 0, for the BD536K it will be in the range from 40 to 100.

Complementary NPN transistor

The complementary NPN transistor to the BD536J is the BD535J.

Replacement and Equivalent for BD536J transistor

You can replace the BD536J with the 2N6490, 2N6490G, 2N6491, 2N6491G, BD204, BD304, BD538J, BD708, BD710, BD712, BD744A, BD744B, BD744C, BD798, BD800, BD802, BD808, BD810, BD908, BD910, BD912, BDT92, BDT92F, BDT94, BDT94F, BDT96, BDT96F, BDX78, MJE2901T, MJE2955T, MJE2955TG, MJF2955 or MJF2955G.

Equivalent

Same transistor is also available in:
  • TO-220 package, BD533K: 50 watts
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