MJE172G Bipolar Transistor

Characteristics of MJE172G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 12.5 W
  • DC Current Gain (hfe): 50 to 250
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE172G

Here is an image showing the pin diagram of this transistor.

SMD Version of MJE172G transistor

The BDP952 (SOT-223) and BDP954 (SOT-223) is the SMD version of the MJE172G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for MJE172G transistor

You can replace the MJE172G with the BD180, BD180G, BD790, BD792, KSE172, MJE172, MJE252 or MJE254.
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