2SB795-M Bipolar Transistor

Characteristics of 2SB795-M Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 2000 to 5000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB795-M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB795-M transistor can have a current gain of 2000 to 5000. The gain of the 2SB795 will be in the range from 2000 to 30000, for the 2SB795-K it will be in the range from 8000 to 30000, for the 2SB795-L it will be in the range from 4000 to 10000.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB795-M might only be marked "B795-M".

Complementary NPN transistor

The complementary NPN transistor to the 2SB795-M is the 2SD986-M.

SMD Version of 2SB795-M transistor

The BSP62 (SOT-223), BSP62T1 (SOT-223), BSP62T1G (SOT-223), BSP62T3 (SOT-223) and BSP62T3G (SOT-223) is the SMD version of the 2SB795-M transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB795-M transistor

You can replace the 2SB795-M with the 2N6036, 2N6036G, 2SB1067, 2SB1149, 2SB1149-M, BD170, BD238, BD238G, BD680, BD680A, BD680AG, BD680G, BD682, BD682G, BD780, KSB1149, KSB1149-O, KSB795, KSB795-R, KSE702, KSE703, MJE252, MJE254, MJE271, MJE271G, MJE702, MJE702G, MJE703, MJE703G or MJE712.
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