BSP62T1G Bipolar Transistor

Characteristics of BSP62T1G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -90 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 1.25 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-223
  • The BSP62T1G is the lead-free version of the BSP62T1 transistor

Pinout of BSP62T1G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BSP62T1G is the BSP52T1G.

Replacement and Equivalent for BSP62T1G transistor

You can replace the BSP62T1G with the BSP62, BSP62T1, BSP62T3 or BSP62T3G.
If you find an error please send an email to mail@el-component.com