BSP62T1G Bipolar Transistor
Characteristics of BSP62T1G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -90 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 1.25 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-223
- The BSP62T1G is the lead-free version of the BSP62T1 transistor
Pinout of BSP62T1G
Complementary NPN transistor
Replacement and Equivalent for BSP62T1G transistor
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