2SB795 Bipolar Transistor

Characteristics of 2SB795 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 2000 to 30000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB795

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB795 transistor can have a current gain of 2000 to 30000. The gain of the 2SB795-K will be in the range from 8000 to 30000, for the 2SB795-L it will be in the range from 4000 to 10000, for the 2SB795-M it will be in the range from 2000 to 5000.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB795 might only be marked "B795".

Complementary NPN transistor

The complementary NPN transistor to the 2SB795 is the 2SD986.

SMD Version of 2SB795 transistor

The BSP62 (SOT-223), BSP62T1 (SOT-223), BSP62T1G (SOT-223), BSP62T3 (SOT-223) and BSP62T3G (SOT-223) is the SMD version of the 2SB795 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB795 transistor

You can replace the 2SB795 with the 2SB1067, BD170, BD238, BD238G, BD680, BD680A, BD680AG, BD680G, BD682, BD682G, BD780, KSB795, KSE702, KSE703, MJE252, MJE254, MJE271, MJE271G, MJE702, MJE702G, MJE703, MJE703G or MJE712.
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