BSP62T1 Bipolar Transistor
Characteristics of BSP62T1 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -90 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 1.25 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-223
Pinout of BSP62T1
Complementary NPN transistor
Replacement and Equivalent for BSP62T1 transistor
Lead-free Version
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