2SB1149-M Bipolar Transistor

Characteristics of 2SB1149-M Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 2000 to 5000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB1149-M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1149-M transistor can have a current gain of 2000 to 5000. The gain of the 2SB1149 will be in the range from 2000 to 15000, for the 2SB1149-K it will be in the range from 5000 to 15000, for the 2SB1149-L it will be in the range from 3000 to 7000.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1149-M might only be marked "B1149-M".

Replacement and Equivalent for 2SB1149-M transistor

You can replace the 2SB1149-M with the BD682, BD682G, KSB1149, KSB1149-O or MJE254.
If you find an error please send an email to mail@el-component.com