2SB1067 Bipolar Transistor

Characteristics of 2SB1067 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 2000
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB1067

Here is an image showing the pin diagram of this transistor.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1067 might only be marked "B1067".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1067 is the 2SD1509.

Replacement and Equivalent for 2SB1067 transistor

You can replace the 2SB1067 with the 2SB1149, 2SB1149-K, 2SB1149-L, 2SB1149-M, KSB1149, KSB1149-G, KSB1149-O or KSB1149-Y.
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