2SB1067 Bipolar Transistor
Characteristics of 2SB1067 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -8 V
- Collector Current − Continuous, max: -2 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 2000
- Transition Frequency, min: 50 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
Pinout of 2SB1067
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB1067 transistor
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