2SB1186-E Bipolar Transistor

Characteristics of 2SB1186-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1186-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1186-E transistor can have a current gain of 100 to 200. The gain of the 2SB1186 will be in the range from 100 to 320, for the 2SB1186-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1186-E might only be marked "B1186-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1186-E is the 2SD1763-E.

SMD Version of 2SB1186-E transistor

The 2SA1201 (SOT-89) and KTA1661 (SOT-89) is the SMD version of the 2SB1186-E transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1186-E transistor

You can replace the 2SB1186-E with the 2SA1006, 2SA1006-Q, 2SA1006A, 2SA1006A-Q, 2SA1011, 2SA1011E, 2SA1077, 2SA1078, 2SA1306, 2SA1306A, 2SA1306B, 2SA1667, 2SA1668, 2SA1859, 2SA1859A, 2SA1930, 2SA1964, 2SA1964-E, 2SA968, 2SA968A, 2SA968B, 2SA985, 2SA985-Q, 2SA985A, 2SA985A-Q, 2SB1085, 2SB1085-E, 2SB1085A, 2SB1085A-E, 2SB1186A, 2SB1186A-E, 2SB546, 2SB546A, 2SB546A-K, 2SB547, 2SB630, 2SB630-Q, 2SB861, 2SB861C, 2SB940, 2SB940-P, 2SB940A, 2SB940A-P, BD942, BD942F, BD956, BDT88, BDT88F, KSB546, KTA1659, KTA1659A, KTA968, KTA968A, KTB1369, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
If you find an error please send an email to mail@el-component.com