2SB940A-P Bipolar Transistor

Characteristics of 2SB940A-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 100 to 240
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB940A-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB940A-P transistor can have a current gain of 100 to 240. The gain of the 2SB940A will be in the range from 60 to 240, for the 2SB940A-Q it will be in the range from 60 to 140.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB940A-P might only be marked "B940A-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SB940A-P is the 2SD1264A-P.

Replacement and Equivalent for 2SB940A-P transistor

You can replace the 2SB940A-P with the 2SA1668, 2SA1859A, 2SA1930, KTB1369, MJE15033, MJE15033G, MJE15035, MJE15035G, MJE5850, MJE5850G, MJE5851 or MJE5851G.
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