2SB1186A Bipolar Transistor

Characteristics of 2SB1186A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1186A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1186A transistor can have a current gain of 60 to 200. The gain of the 2SB1186A-D will be in the range from 60 to 120, for the 2SB1186A-E it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1186A might only be marked "B1186A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1186A is the 2SD1763A.

Replacement and Equivalent for 2SB1186A transistor

You can replace the 2SB1186A with the 2SA1006, 2SA1006A, 2SA1006B, 2SA1011, 2SA1668, 2SA1859A, 2SA1964, 2SB630, 2SB940A, MJE15033, MJE15033G, MJE5850 or MJE5850G.
If you find an error please send an email to mail@el-component.com