2SB1186 Bipolar Transistor

Characteristics of 2SB1186 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 320
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1186

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1186 transistor can have a current gain of 100 to 320. The gain of the 2SB1186-E will be in the range from 100 to 200, for the 2SB1186-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1186 might only be marked "B1186".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1186 is the 2SD1763.

Replacement and Equivalent for 2SB1186 transistor

You can replace the 2SB1186 with the 2SA1006, 2SA1006A, 2SA1078, 2SA1667, 2SA1668, 2SA1930, 2SA985, 2SA985A, 2SB1085, 2SB547, BD956, BDT88, BDT88F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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