2SB861 Bipolar Transistor

Characteristics of 2SB861 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 60 to 200
  • Operating and Storage Junction Temperature Range: -45 to +150 °C
  • Package: TO-220

Pinout of 2SB861

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB861 transistor can have a current gain of 60 to 200. The gain of the 2SB861B will be in the range from 60 to 120, for the 2SB861C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB861 might only be marked "B861".

Complementary NPN transistor

The complementary NPN transistor to the 2SB861 is the 2SD1138.

Replacement and Equivalent for 2SB861 transistor

You can replace the 2SB861 with the 2SA1667, 2SA1668, 2SA1859, 2SA1859A, 2SB546, 2SB546A, 2SB547, 2SB630, 2SB940, 2SB940A, KSB546, MJE15031, MJE15031G, MJE15033, MJE15033G, MJE5850, MJE5850G, MJF15031 or MJF15031G.
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