2SB1186-F Bipolar Transistor

Characteristics of 2SB1186-F Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1186-F

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1186-F transistor can have a current gain of 160 to 320. The gain of the 2SB1186 will be in the range from 100 to 320, for the 2SB1186-E it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1186-F might only be marked "B1186-F".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1186-F is the 2SD1763-F.

Replacement and Equivalent for 2SB1186-F transistor

You can replace the 2SB1186-F with the 2SA1006, 2SA1006-P, 2SA1006A, 2SA1006A-P, 2SA1078, 2SA1667, 2SA1668, 2SA1930, 2SA985, 2SA985-P, 2SA985A, 2SA985A-P, 2SB1085, 2SB1085-F, 2SB547, BD956, BDT88, BDT88F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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