2SA1011E Bipolar Transistor

Characteristics of 2SA1011E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 100 to 200
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1011E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1011E transistor can have a current gain of 100 to 200. The gain of the 2SA1011 will be in the range from 60 to 200, for the 2SA1011D it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1011E might only be marked "A1011E".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1011E is the 2SC2344E.

Replacement and Equivalent for 2SA1011E transistor

You can replace the 2SA1011E with the 2SA1006, 2SA1006-Q, 2SA1006A, 2SA1006A-Q, 2SA1006B, 2SA1006B-Q, 2SA1306, 2SA1306A, 2SA1306B, 2SA1668, 2SA1859A, 2SA1930, 2SA1964, 2SA1964-E, 2SA968, 2SA968A, 2SA968B, 2SB1186A, 2SB1186A-E, 2SB630, 2SB630-Q, 2SB940A, 2SB940A-P, KTA1659, KTA1659A, KTA968, KTA968A, KTB1369, MJE15033, MJE15033G, MJE5850 or MJE5850G.
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