2SB861C Bipolar Transistor

Characteristics of 2SB861C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 100 to 200
  • Operating and Storage Junction Temperature Range: -45 to +150 °C
  • Package: TO-220

Pinout of 2SB861C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB861C transistor can have a current gain of 100 to 200. The gain of the 2SB861 will be in the range from 60 to 200, for the 2SB861B it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB861C might only be marked "B861C".

Complementary NPN transistor

The complementary NPN transistor to the 2SB861C is the 2SD1138C.

SMD Version of 2SB861C transistor

The PBHV9115T (SOT-23), PBHV9115X (SOT-89), PBHV9115Z (SOT-223) and PBHV9215Z (SOT-223) is the SMD version of the 2SB861C transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB861C transistor

You can replace the 2SB861C with the 2SA1667, 2SA1668, 2SA1859, 2SA1859A, 2SA1930, 2SB546, 2SB546A, 2SB546A-K, 2SB547, 2SB630, 2SB630-Q, 2SB940, 2SB940-P, 2SB940A, 2SB940A-P, KSB546, KTB1369, MJE15031, MJE15031G, MJE15033, MJE15033G, MJE5850, MJE5850G, MJF15031 or MJF15031G.
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