2SB1186A-E Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -160 V
• Collector-Base Voltage, max: -160 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -1.5 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 100 to 200
• Transition Frequency, min: 50 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-220F

Here is an image showing the pin diagram of this transistor.The 2SB1186A-E transistor can have a current gain of 100 to 200. The gain of the 2SB1186A will be in the range from 60 to 200, for the 2SB1186A-D it will be in the range from 60 to 120.Sometimes the "2S" prefix is not marked on the package - the 2SB1186A-E might only be marked "B1186A-E".The complementary NPN transistor to the 2SB1186A-E is the 2SD1763A-F.You can replace the 2SB1186A-E with the 2SA1006, 2SA1006-Q, 2SA1006A, 2SA1006A-Q, 2SA1006B, 2SA1006B-Q, 2SA1011, 2SA1011E, 2SA1306, 2SA1306A, 2SA1306B, 2SA1668, 2SA1859A, 2SA1930, 2SA1964, 2SA1964-E, 2SA968, 2SA968A, 2SA968B, 2SB630, 2SB630-Q, 2SB940A, 2SB940A-P, KTA1659, KTA1659A, KTA968, KTA968A, KTB1369, MJE15033, MJE15033G, MJE5850 or MJE5850G.